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Morphological Characterization of Sb-Doped SnO2 Thin Films Developed by Spray Pyrolysis

  • Halima HABIEB
  • Nasr-Eddine HAMDADOU
  • Laboratoire de Micro et Nanophysique « LaMiN », Ecole Nationale Polytechnique d’Oran Maurice Audin « ENPO MA », BP 1523 El Mnaouer, Oran 31000, Algérie Corresponding author *Email: nhamdadou@gmail.com

In the present work, we have successfully deposited Sb antimony doped tin dioxide (SnO2) thin films with different concentrations (0 at%, 1 at%, 3 at% and 5 at%) from a stannous (II) chloride dihydrate solution (SnCl2.2H2O), by the pyrolysis chemical spray deposition technique on ordinary microscope glass substrates preheated to a fixed temperature of 350 °C. After deposition, the films were annealed at temperatures 400 °C for 4h. The aim of this work is on the one hand to study the morphological properties of pure and doped tin dioxide thin films and to determine the different morphological parameters such as: the roughness Ra, Rq and on the other hand to study the effect of Sb doping on the morphological properties of SnO2 thin films. To achieve this purpose, the thickness of all the films was estimated by profilometer with standard scan type. The morphology of the films was examined by atomic force microscope (AFM) in contact mode at room temperature to visualize the surface of our samples (the structure, size and morphology of crystallites ... etc). The 2D and 3D AFM images confirm the formation of nanostructures on the surface, with shapes and dimensions influenced by the amount of antimony doping. All the samples show a polycrystalline morphology, and the grain size progressively decreases with the increase of the Sb concentration (1% and 3%). On the other hand, for high antimony doping (5% Sb) the grains are larger than those observed at 3% doping. The root mean square (RMS) surface roughness values for samples with Sb concentrations (5%) were found to be 8.334 nm.

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Effect of Electronic Properties of Si1-xGex and SiC Semiconductors on the Electrical Behavior of MOS Transistors

  • Mourad Hebali 1,*
  • Melouka Bellil 1
  • Hocine Abdelhak Azzeddine1
  • Benaoumeur Ibari 1
  • Menaouer Bennaoum1
  • Djilali Chalabi 2
  • Department of Electrotechnical, University Mustapha STAMBOULI of Mascara, 29000 Mascara, Algeria.
  • Laboratory: CaSiCCe, ENP Oran-MA, 31000 Oran, Algeria. Corresponding author *Email: mourad.hebali@univ-mascara.dz
  • Corresponding author *Email: mourad.hebali@univ-mascara.dz

In this paper, the electrical performance of Metal-Oxide-Semiconductor MOS transistors    in Si1-xGex and SiC technologies have been studied by BSIM3v3 model. In which the output charac-  teristic ID=f(VDS), transfer characteristic ID=f(VGS) and ION-IOFF currents of the MOS(Si1-xGex) transis-  tors have been investigated and the results so obtained are compared with the MOS(SiC) transistors, using 130 nm technology and OrCAD PSpice software. This study allowed to know the extent to which the electrical behavior of transistors is affected by the most important electronic properties of semiconductors, and the simulation results showed that the above transistors work properly in a regime under a threshold voltage of about 1.2 V. They can be used in low voltage and low power microelectronics by controlling the germanium x fraction and the polytypes of MOS(Si1-xGex) and MOS(SiC) transistors respectively.

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Theoretical insights into the structural and optoelectronic properties of the ternary cesium tetrafluoridobromate semiconductor CsBrF4

  • Ishak Mebarkia
  • Aïssa Manallah
  • Applied Optics Laboratory, Institute of Optics and Precision Mechanics, University of Setif 1, 19000, Setif, Algeria; aissa.manallah@univ-setif.dz
  • Corresponding author *Email: ishak.mebarkia@gmail.com or ishak.mebarkia@univ-setif.dz

This work deals with the first theoretical study of structural, electronic, and optical properties of CsBrF4 ternary compound by using first-principle calculations. The calculated structural parameters and atomic positions are in accordance with the experimental ones declared in the literature. The obtained electronic properties signalize that this compound is a semiconductor material with a direct energy band gap. According to the investigated optical properties, the vast optical absorption range in the ultraviolet region indicates that CsBrF4 semiconductor could be useful for specific applications in ultraviolet optoelectronic devices; consequently, this theoretical study is the potential to support future experimental research.

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Enhancement of the magneto-electronic properties by GGA and TB-mBJ approaches for KMgO3 perovskite oxide.

  • Mama Hamlat
  • FrihaKhelfaoui
  • Kadda Amara
  • laboratory of physico-chemical studies, Dr Tahar Moulay university of Saida, BP 138 Ennasr, 20000 Saida, Algeria
  • Corresponding author *Email: mamahamlat220@gmail.com

we investigate the structural, elastic, electronic and magnetic properties of KMgO3. First-principal calculations, based on the formalism of the density functional theory (DFT) and the method of full potential augmented and linearized plane waves (FP-LAPW) implemented in the Wien2k code. The exchange and correlation effects were treated by the following two approximations: generalized gradient approximation (GGA) and Tran-Blaha modified beck Johnson (TB-mBJ) potentials. After analyzing the obtained structural parameters, the results revealed that KMgO3compound is most stable in its ferromagnetic configuration. The formation energy value showed that this compound can be experimentally synthesized. Furthermore, the calculated band structures, and density of states (DOSs) indicate the half-metallic behavior of KMgO3. We found also that the total magnetic moment is an integer value of 3μBwhich confirms the half-metallic character. The magnetic moment specially issues from the spin-polarization of p electrons of O atoms

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DETERMINATION OF HALF METALLICITY BEHAVIOR OF QUATERNARY HEUSLER ALLOY CrCoScGa

  • Ouafaa Sadouki
  • Friha Khelfaoui
  • Keltouma Boudia
  • University of Tissemsilt - Ahmed Ben Yahia El-Wanchrissi,Tissemsilt, Algeria
  • Laboratory of Physico-chemical Studies, Dr Moulay Tahar University, Saida, Algeria;
  • Corresponding author *Email: ouafaaphy@gmail.com

In this work, the theoretical study through the calculations of the structural, electronic and magnetic properties of quaternary heusler compound CrCoScGa, using wien2k code, is reported. We adopted the generalized gradient approximation (GGA) to estimate the exchange correlation potential. The negative value of the formation energy shows that CrCoScGa compound have a high structural stability in the type III structure feromagnetic phase, so it can be experimentaly synthetised. According to our electronic calculations, CrCoScGa is a half-metallic ferromagnet (HMF) with a half-metallic gap of 0.22 eV. The total magnetic moment of 3µB, mainly originated from Cr and Co atoms, makes this alloy as a spintronic material.

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