In the present work, we have successfully deposited Sb antimony doped tin dioxide (SnO2) thin films with Several advantages over well known LCD's including increased brightness and viewing angle. We are currently investigating Eu doped GaN as a potential red phosphor for TEFL display applications. Eu doped GaN films were grown by solid source molecular beam epitaxy on Si (111) substates. The material was optically characterized through temperature dependent emission spectroscopy using a HeCd laser at 325 nm for above band gap excitation. A strong red emission was obtained at 622 nm, which corresponds to an Eu3+ inner 4f-shell transition from the 5D 0 to 7F2 state. Therefore, the observed thermal quenching of red Eu emission is assigned to a strongly temperature dependent pumping process.