In this paper, the electrical performance of Metal-Oxide-Semiconductor MOS transistors    in Si1-xGex and SiC technologies have been studied by BSIM3v3 model. In which the output charac-  teristic ID=f(VDS), transfer characteristic ID=f(VGS) and ION-IOFF currents of the MOS(Si1-xGex) transis-  tors have been investigated and the results so obtained are compared with the MOS(SiC) transistors, using 130 nm technology and OrCAD PSpice software. This study allowed to know the extent to which the electrical behavior of transistors is affected by the most important electronic properties of semiconductors, and the simulation results showed that the above transistors work properly in a regime under a threshold voltage of about 1.2 V. They can be used in low voltage and low power microelectronics by controlling the germanium x fraction and the polytypes of MOS(Si1-xGex) and MOS(SiC) transistors respectively.